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TC58FVM5B2AXB65 Datasheet(PDF) 23 Page - Toshiba Semiconductor

No. de pieza TC58FVM5B2AXB65
Descripción Electrónicos  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
PDF  63 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC58FVM5B2AXB65 Datasheet(HTML) 23 Page - Toshiba Semiconductor

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TC58FVM5(T/B)(2/3)A(FT/XB)65
2003-01-29 23/63
AC CHARACTERISTICS AND OPERATING CONDITIONS
READ CYCLE
Product name
TC58FVM5T2A/B2A/T3A/B3A
VDD voltage (V)
VDD
= 2.7-3.6 V
VDD
= 2.3-3.6 V
Output load capacitance (CL)
30 pF
100 pF
30 pF
100 pF
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
tRC
Read Cycle Time
65
70
70
75
ns
tPRC
Page Read Cycle Time
25
30
30
35
ns
tACC
Address Access Time
65
70
70
75
ns
tCE
CE
Access Time
65
70
70
75
ns
tOE
OE
Access Time
25
30
30
35
ns
tPACC
Page Access Time
25
30
30
35
ns
tCEE
CE
to Output Low-Z
0
0
0
0
ns
tOEE
OE
to Output Low-Z
0
0
0
0
ns
tOH
Output Data Hold Time
0
0
0
0
ns
tDF1
CE
to Output High-Z
25
25
25
25
ns
tDF2
OE
to Output High-Z
25
25
25
25
ns
BLOCK PROTECT
SYMBOL
PARAMETER
MIN
MAX
UNIT
tVPT
VID Transition Time
4
µs
tVPS
VID Set-up Time
4
µs
tCESP
CE
Set-up Time
4
µs
tVPH
OE
Hold Time
4
µs
tPPLH
WE Low-Level Hold Time
100
µs
PROGRAM AND ERASE CHARACTERISTICS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
Auto-Program Time (Byte Mode)
8
300
µs
tPPW
Auto-Program Time (Word Mode)
11
300
µs
tPPAW
Auto-Page program time
45
2400
µs
tPCEW
Auto Chip Erase Time
50
710
s
tPBEW
Auto Block Erase Time
0.7
10
s
tEW
Erase/Program Cycle
10
5
Cycles
* Auto Chip Erase Time and Auto Block Erase Time include internal pre program time.



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