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PMWD18UN Datasheet(PDF) 8 Page - NXP Semiconductors |
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PMWD18UN Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 12 page ![]() Philips Semiconductors PMWD18UN Dual N-channel µTrenchMOS™ ultra low level FET Product data Rev. 02 — 23 February 2004 8 of 12 9397 750 12706 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ID = 4 A; VDD =16V Fig 13. Gate-source voltage as a function of gate charge; typical values. 003aaa265 0 1 2 3 4 5 0 102030 QG (nC) VGS (V) |
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