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BAS40 Datasheet(PDF) 1 Page - Chip Integration Technology Corporation

No. de pieza BAS40
Descripción Electrónicos  200mA Surface Mount Small Signal Diodes
PDF  3 Pages
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Fabricante Electrónico  CITC [Chip Integration Technology Corporation]
Página de inicio  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

BAS40 Datasheet(HTML) 1 Page - Chip Integration Technology Corporation

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Dimensions in inches and (millimeters)
Features
■ Mechanical data
■ Maximum ratings and electrical characteristics
Rating at 25
ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
OC
Outline
• S
Low current rectification and high speed switching.
mall surface mount type.
Up to 200mA current capability.
Low forward voltage drop (VF = 1.00V typ. @40mA).
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "G" indicates Halogen-free part, ex.BAS40G.
SOT-23
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
• Epoxy:UL94-V0 rated flame retardant
Marking code
0.035 (0.89)
0.044 (1.11)
0.110 (2.80)
0.120 (3.04)
.070(1.78)
.081(2.04)
0.035 (0.89)
0.040 (1.02)
0.015 (0.37)
0.020 (0.50)
A
B
C
Document ID : DS-22K1Q
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C
A
C
B
BAS40
A
C
B
BAS40-06
A
C
B
BAS40-05
A
C
B
BAS40-04
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Marking code
V
RRM
40
UNIT
V
OC
Power Dissipation
150
P
D
-65 ~ +150
Junction Temperature
Forward Continuous Current
T
J
O
TA = 25 C
I
F
T
STG
mA
mW
BAS40
BAS40-06
B1
L2
Storage Temperature
+150
OC
120
BAS40-04
CB
BAS40-05
45
Working Peak Reverse Voltage
DC Blocking Voltage
V
RWM
V
R
I
R
V
F
Characteristic
Symbol
MIN.
MAX.
UNIT
Diode Capacitance
Forward Voltage
V
pF
0.40
5.0
I = 1mA
F
V = 0V, f = 1.0MHz
R
Reverse Current
V = 30V
R
Thermal resistance from junction to ambient
uA
1
TYP.
I = 40mA
F
1.0
I = 10mA
F
0.56
10
V = 40V
R
Repetitive Peak forward surge current
120
mA
Non-repetitive peak forward current
I
FSM
I
FSM
Operating ambient temperature
-65 ~ +150
OC
T
amb
200
C
d
R
θJA
K /W
500
@ t <10ms
P
@ t ≤1s;δ≤0.5
P
mA
BAS40 / 04 / 05 / 06
200mA Surface Mount Small Signal Diodes


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