IRHF7130 datasheet(3/12 Pages) IRF

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Radiation Performance of Rad Hard HEXFETs

Table 1. Low Dose Rate

IRHF7130

IRHF8130

Parameter

100K Rads (Si) 1000K Rads (Si)

Units

Test Conditions

Min

Max

Min

Max

BVDSS

Drain-to-Source Breakdown Voltage

100

—

100

—

VGS = 0V, ID = 1.0mA

VGS(th)

Gate Threshold Voltage

2.0

4.0

1.25

4.5

VGS = VDS, ID = 1.0mA

IGSS

Gate-to-Source Leakage Forward

—

100

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

-100

—

-100

VGS = -20 V

IDSS

Zero Gate Voltage Drain Current

—

µA

VDS=0.8 x Max Rating, VGS =0V

RDS(on)1

Static Drain-to-Source

—

0.18

—

0.24

Ω

VGS = 12V, ID = 5.0A

On-State Resistance One

VSD

Diode Forward Voltage

—

1.5

—

1.5

TC = 25°C, IS =8.0A,VGS = 0V

International Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability. The hard-

ness assurance program at International Rectifier

comprises three radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MIL-STD-750, test

method 1019 condition A. International Rectifier has

imposed a standard gate condition of 12 volts per

note 5 and a V

DS bias condition equal to 80% of the

device rated voltage per note 6. Pre- and post- irra-

diation limits of the devices irradiated to 1 x 105 Rads

(Si) are identical and are presented in Table 1, col-

umn 1, IRHF7130. Post-irradiation limits of the devices

irradiated to 1 x 106 Rads (Si) are presented in Table

1, column 2, IRHF8130. The values in Table 1 will be

met for either of the two low dose rate test circuits that

are used. Both pre- and post-irradiation performance

are tested and specified using the same drive circuitry

and test conditions in order to provide a direct com-

parison.

High dose rate testing may be done on a special

request basis using a dose rate up to 1 x 1012 Rads

(Si)/Sec (See Table 2)

International Rectifier radiation hardened HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environments. Single Event Effects char-

acterization is shown in Table 3.

Radiation Characteristics

Table 2. High Dose Rate

1011 Rads (Si)/sec 1012 Rads (Si)/sec

Parameter

Min Typ Max

Units

Test Conditions

VDSS

Drain-to-Source Voltage

—

Applied drain-to-source voltage during

gamma-dot

IPP

—

100

—

100

—

Peak radiation induced photo-current

di/dt

—

800

—

160 A/µsec Rate of rise of photo-current

0.1

—

0.5

—

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

VDSBias

VGS Bias

Ion

(MeV/mg/cm2)

(ions/cm2)

(µm)

(V)

3x 105

~43

100

-5

IRHF7130, IRHF8130,

JANSR-,JANSH-,2N7261 Devices

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