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TS882 Datasheet(PDF) 9 Page - STMicroelectronics

No. de pieza TS882
Descripción Electrónicos  Rail-to-rail 1.1 V dual and quad nanopower comparators
PDF  26 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TS882 Datasheet(HTML) 9 Page - STMicroelectronics

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DocID024119 Rev 3
9/26
TS882, TS884
Electrical characteristics
26
TF
Fall time (90% to 10%)
CL = 30 pF, RL = 1 MΩ
150
ns
TON
Power-up time
1.1
1.7
ms
1.
All values over the temperature range are guaranteed through correlation and simulation. No production test is performed
at the temperature range limits.
2.
The offset is defined as the average value of positive and negative trip points (input voltage differences requested to
change the output state in each direction).
3.
The hysteresis is a built-in feature of the TS882 device. It is defined as the voltage difference between the trip points.
4.
Maximum values include unavoidable inaccuracies of the industrial tests.
Table 6. VCC = +5 V, Tamb = +25 °C, VICM = VCC/2 (unless otherwise specified)
(1) (continued)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit



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