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STG4160 Datasheet(PDF) 6 Page - STMicroelectronics |
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STG4160 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 19 page ![]() Electrical characteristics STG4160 6/19 DocID15013 Rev 3 4 Electrical characteristics Table 6. DC specifications Symbol Parameter VCC (V) VL (V) Test conditions Value Unit TA = 25 °C -40 to 85 °C Min. Typ. Max. Min. Max. VIH High level input voltage 1.65 – 4.3 1.65 – 1.95 1.25 1.25 V 2.3 – 2.7 1.75 1.75 3.0 – 3.6 2.34 2.34 4.3 2.80 2.80 VIL Low level input voltage 1.65 – 4.3 1.65 – 1.95 0.6 0.6 V 2.3 – 2.7 0.8 0.8 3.0 – 3.6 1.05 1.05 4.3 1.5 1.5 RON On-resistance 1.8 1.65 – 4.3 VS = 0 V to VCC IS =100 mA 1.5 2.5 3.7 2.25 0.75 1.0 1.3 3 0.50 0.65 0.8 3.7 0.45 0.55 0.7 4.3 0.40 0.5 0.65 ∆RON On-resistance match between channels(1) 1.8 1.65 – 4.3 VS = 0 V to VCC IS =100 mA 40 m 2.25 20 310 3.7 10 4.3 10 RFLAT On-resistance flatness(2) 1.8 1.65 – 4.3 VS = 0 V to VCC IS =100 mA 1.0 1.7 2.0 m 2.25 300 430 550 3 150 190 270 3.7 140 180 230 4.3 140 180 220 IOFF Sn OFF state leakage current 4.3 4.3 VS = 0.3 to 4.0 VD = 0.3 to 4.0 -30 30 -300 300 nA ION Sn ON state leakage current 4.3 4.3 VS = 0.3 to 4.0 VD = open -30 30 -300 300 nA ID D ON state leakage current 4.3 4.3 VS = open VD = 0 to 4.0 -30 30 -300 300 nA |
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