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AM29SL800D Datasheet(PDF) 32 Page - Advanced Micro Devices |
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AM29SL800D Datasheet(HTML) 32 Page - Advanced Micro Devices |
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32 / 46 page ![]() ADV ANCE I N FO RMAT I O N March 17, 2003 Am29SL800D 31 AC CHARACTERISTICS Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Speed Options JEDEC Std Description -90 -100 -120 -150 Unit tAVAV tWC Write Cycle Time (Note 1) Min 90 100 120 150 ns tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 45 50 60 70 ns tDVWH tDS Data Setup Time Min 45 50 60 70 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 45 50 60 70 ns tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Notes 1, 2) Byte Typ 5 µs Word Typ 7 tWHWH2 tWHWH2 Sector Erase Operation (Notes 1, 2) Typ 0.7 sec tVCS VCC Setup Time Min 50 µs tRB Recovery Time from RY/BY# Min 0 ns tBUSY Program/Erase Valid to RY/BY# Delay Min 200 ns |
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