STPS30H60C datasheet(3/11 Pages) STMICROELECTRONICS

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STPS30H60C

Characteristics

3/11

Figure 1.

Conduction losses versus

average forward current

Figure 2.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

(W)

F(AV)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

(A)

F(AV)

(A)

F(AV)

100

125

150

175

h(j a)=Rth(j c)

th(j a)=15 °C/W

TO-220FPAB

(°C)

amb

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

1.E-03

1.E-02

1.E-01

1.E+00

1.E-01

1.E-02

1.E+01

1.E+02

1.E+03

t (µs)

P(t )

(1µs)

ARM p

ARM

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

(TO-220AB, TO-247 D2PAK, I2PAK)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

(TO-220FPAB)

I (A)

100

120

140

160

180

200

1.E-03

1.E-02

1.E-01

1.E+00

C=50°C

C=75°C

C=125°C

δ =0 5

t(s)

100

120

1.E-03

1.E-02

1.E-01

1.E+00

C=50 °C

C=75 °C

C=125 °C

δ =0 5

TO-220FPAB

I (A)

t(s)

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