MGA-683P8

Low Noise And High Linearity Active Bias

Low Noise Amplifier

Data Sheet

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model = 90 V (Class A)

ESD Human Body Model = 500 V (Class 1B)

Refer to Avago Application Note A004R:

Electrostatic Discharge, Damage and Control.

Description

Avago Technologies’ MGA-683P8 is an economical, easy-

to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA

has low noise and high linearity achieved through the

use of Avago Technologies’ proprietary 0.25

m GaAs

Enhancement-mode pHEMT process. It is housed in a

(QFN) package. It is designed for optimum use from 450

MHz up to 2 GHz. The compact footprint and low profile

coupled with low noise, high gain and high linearity make

the MGA-683P8 an ideal choice as a low noise amplifier for

cellular infrastructure for GSM and CDMA. For optimum

performance at higher frequency from 1.5 GHz to 4 GHz,

the MGA-684P8 is recommended. Both MGA-683P8 and

MGA-684P8 share the same package and pinout.

Pin Configuration and Package Marking

Features

 Low noise Figure

 High linearity performance

 Excellent uniformity in product specifications

 Tape-and-Reel packaging option available

Specifications

900 MHz; 5 V, 40 mA

 17.8 dB Gain

 0.56 dB Noise Figure

 More than 20 dB Input Return Loss

 32.8 dBm Output IP3

 21.5 dBm Output Power at 1dB gain compression

Applications

 Low noise amplifier for cellular infrastructure for GSM

and CDMA.

 Other low noise application.

 Repeater, Metrocell/Picocell application.

Simplified Schematic

Pin 1 – Vbias

Pin 5 – Not Used

Pin 2 – RFinput

Pin 6 – Not Used

Pin 3 – Not Used

Pin 7 – RFoutput/Vdd

Pin 4 – Not Used

Pin 8 – Not Used

Centre tab - Ground

Top View

Bottom View

[2]

[1]

[3]

[4]

[7]

[8]

[6]

[5]

83X

[2]

[1]

[3]

[4]

[7]

[8]

[6]

[5]

Note:

 The schematic is shown with the assumption that similar PCB is used

for both MGA-683P8 and MGA-684P8.

 Detail of the components needed for this product is shown inTable 1.

 Enhancement mode technology employs positive gate voltage,

thereby eliminating the need of negative gate voltage associated

with conventional depletion mode devices.

 Good RF practice requires all unused pins to be earthed.

Rbias

C6

C3

C2

R2

L2

R1

L1

C1

C4

L3

RFin

RFout

Vdd

[1]

[2]

[3]

[4]

[8]

[7]

[6]

[5]

C5

Note:

Package marking provides orientation and identification

“83” = Device Code

“X” = Month Code