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STM32L15xRC Datasheet(PDF) 59 Page - STMicroelectronics

No. de pieza STM32L15xRC
Descripción Electrónicos  Reset and supply management
PDF  136 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L15xRC Datasheet(HTML) 59 Page - STMicroelectronics

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STM32L151xC STM32L152xC
Electrical characteristics
109
6.3.3
Embedded internal reference voltage
The parameters given in Table 17 are based on characterization results, unless otherwise
specified.
Table 16. Embedded internal reference voltage calibration values
Calibration value name
Description
Memory address
VREFINT_CAL
Raw data acquired at
temperature of 30 °C ±5 °C
VDDA= 3 V ±10 mV
0x1FF8 00F8 - 0x1FF8 00F9
Table 17. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT out (1)
Internal reference voltage
– 40 °C < TJ < +110 °C 1.202 1.224
1.242
V
IREFINT
Internal reference current
consumption
--
1.4
2.3
µA
TVREFINT
Internal reference startup time
-
-
2
3
ms
VVREF_MEAS
VDDA and VREF+ voltage during
VREFINT factory measure
-2.99
3
3.01
V
AVREF_MEAS
Accuracy of factory-measured VREF
value(2)
Including uncertainties
due to ADC and
VDDA/VREF+ values
--
±5
mV
TCoeff(3)
Temperature coefficient
–40 °C < TJ < +110 °C
-
25
100
ppm/°
C
ACoeff(3)
Long-term stability
1000 hours, T= 25 °C
-
-
1000
ppm
VDDCoeff(3)
Voltage coefficient
3.0 V < VDDA < 3.6 V
-
-
2000
ppm/V
TS_vrefint(3)
ADC sampling time when reading
the internal reference voltage
-4
-
-
µs
TADC_BUF(3) (4)
Startup time of reference voltage
buffer for ADC
--
-
10
µs
IBUF_ADC(3)
Consumption of reference voltage
buffer for ADC
-
-
13.5
25
µA
IVREF_OUT(3)
VREF_OUT output current (5)
--
-
1
µA
CVREF_OUT(3)
VREF_OUT output load
-
-
-
50
pF
ILPBUF(3)
Consumption of reference voltage
buffer for VREF_OUT and COMP
-
-
730
1200
nA
VREFINT_DIV1(3) 1/4 reference voltage
-
24
25
26
%
VREFIN
T
VREFINT_DIV2(3) 1/2 reference voltage
-
49
50
51
VREFINT_DIV3(3) 3/4 reference voltage
-
74
75
76
1. Guaranteed by test in production.
2. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes.
3. Guaranteed by characterization results.
4. Shortest sampling time can be determined in the application by multiple iterations.



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