STM32F303C6 datasheet(68/115 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F303x6/x8

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DocID025083 Rev 5

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Table 41. LSE oscillator characteristics (fLSE = 32.768 kHz)

Symbol

Parameter

Conditions(1)

1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator

design guide for ST microcontrollers”.

Min.

(2)

2. Guaranteed by design, not tested in production.

Typ.

Max.(

Unit

IDD

LSE current consumption

LSEDRV[1:0]=00

lower driving capability

-0.5

0.9

µA

LSEDRV[1:0]=10

medium low driving

capability

LSEDRV[1:0]=01

medium high-driving

capability

1.3

LSEDRV[1:0]=11

higher-driving capability

1.6

Oscillator

transconductance

LSEDRV[1:0]=00

lower-driving capability

µA/V

LSEDRV[1:0]=10

medium low-driving

capability

LSEDRV[1:0]=01

medium high-driving

capability

LSEDRV[1:0]=11

higher-driving capability

tSU(LSE)(3)

tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized

32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly

with the crystal manufacturer.

Startup time

VDD is stabilized

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