MBR580 thru MBR5100

Symbol

Characteristics

Maximum Average Forward Rectified Current

Maximum Ratings

5

120

A

A

Unit

o

Maximum Forward

Voltage (Note 1)

Maximum DC Reverse Current

At Rated DC Blocking Voltage

Typical Junction Capacitance (Note 3)

Operating Temperature Range

0.85

0.75

0.05

10

-

400

-50 to +150

-50 to +150

V

mA

pF

o

o

o

o

Typical Thermal Resistance (Note 2)

C/W

o

C

o

NOTES: 1. 300us Pulse Width, Duty Cycle 2%.

2. Thermal Resistance Junction To Case.

3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

High Tjm Low IRRM Schottky Barrier Diodes

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

Q

Milimeter

Min.

Max.

12.70 14.73

14.23 16.51

9.66 10.66

3.54

4.08

5.85

6.85

2.54

3.42

1.15

1.77

-

6.35

0.64

0.89

4.83

5.33

3.56

4.82

0.38

0.56

2.04

2.49

0.64

1.39

Inches

Min.

Max.

0.500 0.580

0.560 0.650

0.380 0.420

0.139 0.161

2.300 0.420

0.100 0.135

0.045 0.070

-

0.250

0.025 0.035

0.190 0.210

0.140 0.190

0.015 0.022

0.080 0.115

0.025 0.055

Dimensions TO-220AC

C

A

MBR580

MBR5100

V

80

100

V

56

70

V

80

100

A=Anode, C=Cathode, TAB=Cathode

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

dv/dt

10000

V/us

C

o

Storage Temperature Range

FEATURES

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High surge capacity

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

MECHANICAL DATA

* Case: TO-220AC molded plastic

* Polarity: As marked on the body

* Weight: 2 grams

* Mounting position: Any

C(TAB)

* RoHS compliant

P1

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