T835T-8FP datasheet(3/9 Pages) STMICROELECTRONICS

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T835T-8FP

Characteristics

Table 4. Static Characteristics

Symbol

Test conditions

Value

Unit

(1)

ITM = 11.3 A, tp = 380 µs

Tj = 25 °C

Max.

1.55

Vt0

(1)

Threshold voltage

Tj = 150 °C

Max.

0.85

(1)

Dynamic resistance

Tj = 150 °C

Max.

IDRM

IRRM

VDRM = VRRM = 800 V

Tj = 25 °C

Max.

5µA

Tj = 125 °C

0.8

VDRM = VRRM = 600 V

Tj = 150 °C

Max.

2.4

1. For both polarities of A2 referenced to A1

Table 5. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

3.8

°C/W

Rth(j-a)

Junction to ambient

°C/W

Figure 1. Maximum power dissipation versus

on-state rms current (full cycle)

Figure 2. On-state rms current versus case

temperature (full cycle)

456

180°

I(A)

T(RMS)

P(W)

α =180 °

I(A)

T(RMS)

100

125

150

α =180°

T (°C)

Figure 3. On-state rms current versus ambient

temperature (free air convection)

Figure 4. Relative variation of thermal

impedance versus pulse duration

I(A)

T(RMS)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

100

125

150

α = 180°

T (°C)

K = [Zth / Rth]

1.0E-02

1.0E-01

1.0E+00

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

th(j-c)

th(j-a)

tp (s)

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