48N60M2 datasheet(3/12 Pages) STMICROELECTRONICS

No. de pieza	48N60M2

Descripción Electrónicos	Extremely low gate charge

PDF	12 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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STW48N60M2-4

Electrical ratings

DocID026750 Rev 3

3/12

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM (1)

Drain current (pulsed)

168

PTOT

Total dissipation at TC = 25 °C

300

IAR

Max. current during repetitive or single pulse avalanche

(pulse width limited by Tjmax.)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

dv/dt (2)

Peak diode recovery voltage slope

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

°C

Notes:

(1)Pulse width limited by safe operating area.

(2)ISD ≤ 42 A, di/dt = 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V

(3)VDS ≤ 480 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max.

0.42

°C/W

Rthj-amb

Thermal resistance junction-ambient max.

°C/W

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