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STPS80H100C Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STPS80H100C
Descripción Electrónicos  Low leakage current
PDF  7 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS80H100C Datasheet(HTML) 3 Page - STMicroelectronics

  STPS80H100C Datasheet HTML 1Page - STMicroelectronics STPS80H100C Datasheet HTML 2Page - STMicroelectronics STPS80H100C Datasheet HTML 3Page - STMicroelectronics STPS80H100C Datasheet HTML 4Page - STMicroelectronics STPS80H100C Datasheet HTML 5Page - STMicroelectronics STPS80H100C Datasheet HTML 6Page - STMicroelectronics STPS80H100C Datasheet HTML 7Page - STMicroelectronics  
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STPS80H100C
Characteristics
Doc ID 6727 Rev 3
3/7
Figure 1.
Average forward power dissipation
versus average forward current
(per diode)
Figure 2.
Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
IF(av) (A)
PF(av)(W)
T
δ=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
45
50
Tamb(°C)
IF(av)(A)
Rth(j-a)=5°C/W
Rth(j-a)=Rth(j-c)
T
δ=tp/T
tp
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
P(tp)
P
(1µs)
ARM
ARM
t (µs)
p
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
P(T )
P
(25 °C)
ARM
j
ARM
T (°C)
j
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
1E-3
1E-2
1E-1
1E+0
0
100
200
300
400
500
t(s)
IM(A)
Tc=50°C
Tc=75°C
Tc=110°C
IM
t
δ=0.5
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
T
δ=tp/T
tp



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