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STPS15L45C Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STPS15L45C
Descripción Electrónicos  Low drop power Schottky rectifier
PDF  8 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS15L45C Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS15L45C
2/8
DocID8564 Rev 4
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
 T
j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.29 x IF(AV) + 0.023 IF
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS)
Forward rms current
10
A
IF(AV)
Average forward current,
δ = 0.5, square
wave
Tc = 140 °C
(1)
Per diode
7.5
A
Per device
15
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
PARM
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
265
W
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature(2)
150
°C
1.
Value based on Rth(j-c) max (per diode)
2.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a

--------------------------
Table 3. Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
4
°C/W
Total
2.4
Rth(c)
Coupling
0.7
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
1mA
Tj = 125 °C
23
45
mA
VF
(1)
Forward voltage drop
Tj = 25 °C
IF = 7.5 A
0.52
V
Tj = 125 °C
IF = 7.5 A
0.40
0.46
Tj = 25 °C
IF = 12 A
0.60
Tj = 125 °C
IF = 12 A
0.49
0.57
Tj = 25 °C
IF = 15 A
0.64
Tj = 125 °C
IF = 15 A
0.53
0.63
1.
Pulse test: tp = 380 µs,  < 2%



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