STPS10SM80C datasheet(1/11 Pages) STMICROELECTRONICS

No. de pieza	STPS10SM80C

Descripción Electrónicos	High junction temperature capability

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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April 2011

Doc ID 018721 Rev 1

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11

STPS10SM80C

Power Schottky rectifier

Features

■ High junction temperature capability

■ Optimized trade-off between leakage current

and forward voltage drop

■ Low leakage current

■ Avalanche capability specified

■ Insulated package TO-220FPAB

– insulated voltage: 2000 V

– package capacitance: 45 pF

Description

This dual diode Schottky rectifier is suited for high

frequency switch mode power supply.

Packaged in TO-220AB, I2PAK, D2PAK and TO-

220FPAB, this device is particularly suited for use

in notebook, game station, LCD TV and desktop

adapters, providing these applications with a

good efficiency at both low and high load.

Figure 1.

Electrical characteristics(a)

Table 1.

Device summary

Symbol

Value

IF(AV)

2 x 5 A

VRRM

80 V

Tj (max)

175 °C

VF (typ)

485 mV

a.

VARM and IARM must respect the reverse safe

operating area defined in Figure 13. VAR and IAR are

pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,

are static characteristics

A1

K

A2

A1

A2

K

A1

A2

K

A1

A2

K

TO-220AB

STPS10SM80CT

TO-220FPAB

STPS10SM80CFP

I2PAK

STPS10SM80CR

D2PAK

STPS10SM80CG-TR

A1

A2

K

IF

2 x IO

IO

IR

IAR

VF(Io)

VTo

VF(2xIo)

VF

V

I

V

VR

VRRM

"Reverse"

"Forward"

VAR

X

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