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STP165N10F4 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP165N10F4 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() November 2010 Doc ID 15781 Rev 2 1/12 12 STP165N10F4 N-channel 100 V, 4.4 m Ω, 120 A TO-220 STripFET™ DeepGATE™ Power MOSFET Features ■ N-channel enhancement mode ■ 100% avalanche rated ■ Low gate charge ■ Very low on-resistance Application Switching applications Description The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure. The product is tailored to minimize on-resistance. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STP165N10F4 100 V < 5.5 m Ω 120 A 1 2 3 TO-220 Table 1. Device summary Order code Marking Package Packaging STP165N10F4 165N10F4 TO-220 Tube www.st.com |
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