STL110NS3LLH7 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STL110NS3LLH7

4/14

DocID024570 Rev 4

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0 V

IDSS

Zero gate voltage

drain current

VGS = 0 V

VDS = 24 V

500

µA

IGSS

Gate-body leakage

current

VGS = ± 20 V, VDS = 0 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 1 mA

1.2

2.3

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 14 A

0.0027 0.0034

VGS = 4.5 V, ID = 14 A

0.004

0.005

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

-2110-

Coss

Output capacitance

640

Crss

Reverse transfer

capacitance

-42

Total gate charge

VDD = 15 V, ID = 28 A,

VGS = 4.5 V

(see Figure 11)

13.7

Qgs

Gate-source charge

7.5

Qgd

Gate-drain charge

3.3

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 15 V, ID = 14 A,

RG = 4.7 Ω, VGS = 4.5 V

-26.4

Rise time

10.4

td(off)

Turn-off delay time

31.8

Fall time

12.5

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