STGWT30H60DFB datasheet(6/20 Pages) STMICROELECTRONICS

No. de pieza	STGWT30H60DFB

Descripción Electrónicos	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

PDF	20 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Electrical characteristics

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB

6/20

DocID026676 Rev 3

2.1

Electrical characteristics (curve)

Figure 2. Power dissipation vs. case

temperature

Figure 3. Collector current vs. case temperature

Ptot

150

100

TC(°C)

(W)

100 125 150

200

175

250

VGE ≥ 15V, TJ ≤ 175 °C

GIPG280120141353FSR

TC(°C)

(A)

100 125 150

VGE ≥ 15V, TJ ≤ 175 °C

GIPG280120141346FSR

Figure 4. Output characteristics (TJ = 25°C)

Figure 5. Output characteristics (TJ = 175°C)

VCE(V)

(A)

100

11V

VGE =15 V

13V

GIPG280120141156FSR

VCE(V)

(A)

100

11V

VGE =15 V

13V

GIPG280120141206FSR

Figure 6. VCE(sat) vs. junction temperature

Figure 7. VCE(sat) vs. collector current

VCE(sat)

1.8

1.6

1.4

1.2

-50

TJ(°C)

(V)

100

150

2.2

2.0

VGE= 15V

IC= 60A

IC= 30A

IC= 15A

GIPG280120141440FSR

VCE(sat)

1.6

1.4

1.2

IC(A)

(V)

2.2

2.0

1.8

VGE= 15V

TJ= 175°C

TJ= 25°C

TJ= -40°C

2.4

GIPG280120141446FSR

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