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2STF2280 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza 2STF2280
Descripción Electrónicos  Low collector-emitter saturation voltage
PDF  7 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2STF2280 Datasheet(HTML) 3 Page - STMicroelectronics

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2STF2280
Electrical characteristics
Doc ID 16984 Rev 1
3/7
2
Electrical characteristics
TCASE = 25 °C unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = -80 V
-500
µA
ICEO
Collector cut-off current
(IB = 0)
VCE = -80 V
-1
mA
IEBO
Emitter cut-off current (IC = 0) VEB = -5 V
-100
µA
VCEO(sus)
(1)
Collector-emitter sustaining
voltage (IB = 0)
IC = -10 mA
-80
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = -100 mA, IB = -10 mA
IC = -1 A, IB = -100 mA
-15
-100
-250
mV
mV
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = -100 mA, IB = -10 mA
IC = -1 A, IB = -100 mA
-1
-1.1
V
V
hFE
(1)
DC current gain
IC = -100 mA, VCE = -2 V
IC = -500 mA, VCE = -2 V
IC = -1 A, VCE = -2 V
140
100
80
190
300
fT
Transition frequency
IC = -0.1 A, VCE = -10 V
50
MHz
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %.



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