STP40N65M2 datasheet(5/14 Pages) STMICROELECTRONICS

No. de pieza	STP40N65M2

Descripción Electrónicos	Extremely low gate charge

PDF	14 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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5 / 14 page

STI40N65M2, STP40N65M2

Electrical characteristics

DocID027478 Rev 1

5/14

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Source-drain current

(pulsed)

128

VSD

(2)

Forward on voltage

VGS = 0 V, ISD = 32 A

1.6

trr

Reverse recovery time

ISD = 32 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16: "

Test circuit for inductive load

switching and diode recovery

times")

468

Qrr

Reverse recovery charge

8.7

µC

IRRM

Reverse recovery current

37.5

trr

Reverse recovery time

ISD = 32 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: " Test circuit for

inductive load switching and

diode recovery times")

610

Qrr

Reverse recovery charge

11.7

µC

IRRM

Reverse recovery current

Notes:

(1)

Pulse width is limited by safe operating area

(2)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%

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