STF5N60M2 datasheet(5/13 Pages) STMICROELECTRONICS

No. de pieza	STF5N60M2

Descripción Electrónicos	Extremely low gate charge

PDF	13 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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STF5N60M2

Electrical characteristics

DocID025320 Rev 2

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

3.5

ISDM(1)

Source-drain current

(pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 3.5 A

1.6

trr

Reverse recovery time

ISD = 3.5 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16: "Test

circuit for inductive load switching

and diode recovery times")

220

Qrr

Reverse recovery

charge

1.05

µC

IRRM

Reverse recovery

current

9.5

trr

Reverse recovery time

ISD = 3.5 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and diode

recovery times")

314

Qrr

Reverse recovery

charge

1.5

µC

IRRM

Reverse recovery

current

9.5

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5 %.

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