DocID024661 Rev 3

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STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5

Electrical characteristics

26

.

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD

capability of the device. The Zener voltage is appropriate for efficient and cost-effective

intervention to protect the device integrity. These integrated Zener diodes thus eliminate the

need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

-16-

ns

Rise time

-

7.5

-

ns

Turn-off delay time

-

28.5

-

ns

Fall time

-

16

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

4.5

A

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

18

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

di/dt = 100 A/µs,

-

280

ns

Reverse recovery charge

-

2.2

μC

Reverse recovery current

-

15.5

A

Reverse recovery time

di/dt =100 A/µs,

Tj = 150 °C

-

450

ns

Reverse recovery charge

-

3.15

μC

Reverse recovery current

-

14

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

30

-

-

V