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STD6N60M2 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STD6N60M2
Descripción Electrónicos  Extremely low gate charge
PDF  21 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD6N60M2 Datasheet(HTML) 5 Page - STMicroelectronics

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STB6N60M2, STD6N60M2
Electrical characteristics
21
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
4.5
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
18
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 4.5 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 17)
-
274
ns
Qrr
Reverse recovery charge
-
1.47
µC
IRRM
Reverse recovery current
-
10.7
A
trr
Reverse recovery time
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17)
-
376
ns
Qrr
Reverse recovery charge
-
1.96
µC
IRRM
Reverse recovery current
-
10.5
A



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