STPSC5H12 datasheet(1/10 Pages) STMICROELECTRONICS

No. de pieza	STPSC5H12

Descripción Electrónicos	1200 V power Schottky silicon carbide diode

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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January 2017

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This is information on a product in full production.

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STPSC5H12

1200 V power Schottky silicon carbide diode

Datasheet - production data

Features



No or negligible reverse recovery



Switching behavior independent of

temperature



Robust high voltage periphery



Operating Tj from -40 °C to 175 °C



Low VF



ECOPACK®2 compliant

Description

The SiC diode, available in TO-220AC and DPAK

HV, is an ultrahigh performance power Schottky

rectifier. It is manufactured using a silicon carbide

substrate. The wide band-gap material allows the

design of a low VF Schottky diode structure with a

1200 V rating. Due to the Schottky construction,

no recovery is shown at turn-off and ringing

patterns are negligible. The minimal capacitive

turn-off behavior is independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

IF(AV)

5 A

VRRM

1200 V

Tj(max.)

175 °C

VF(typ.)

1.35 V

A

K

A

K

TO-220AC

DPAK HV 2L

A

K

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STPSC5H12 Datasheet(PDF) 1 Page - STMicroelectronics

STPSC5H12 Datasheet(HTML) 1 Page - STMicroelectronics

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