2003 May 01

2

Philips Semiconductors

Product specification

Schottky barrier diode

BAT960

FEATURES

• High current capability

• Very low forward voltage

• Ultra small plastic SMD package

• Flat leads: excellent coplanarity and improved thermal

behaviour.

APPLICATIONS

• Ultra high-speed switching

• rectification

• DC/DC conversion

• Switch mode power supply

• Inverse polarity protection.

GENERAL DESCRIPTION

Planar Schottky barrier diode with an integrated guard ring

for stress protection in a SOT666 ultra small SMD plastic

package.

PINNING

PIN

DESCRIPTION

1

cathode

2

cathode

3

anode

4

anode

5

cathode

6

cathode

handbook, halfpage

12

3

4

5

6

1, 2

5, 6

3, 4

MHC310

Fig.1 Simplified outline (SOT666) and symbol.

Marking code: B9.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Only valid, if pins 3 and 4 are connected in parallel.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

23

V

continuous forward current

−

1A

non-repetitive peak forward current

t = 8.3 ms half sinewave;

JEDEC method; note 1

−

8A

storage temperature

−65

+150

°C

junction temperature

−

125

°C

operating ambient temperature

−65

+125

°C