LMX2332LSLB datasheet(7/21 Pages) NSC

No. de pieza	LMX2332LSLB

Descripción Electrónicos	PLLatinum??Low Power Dual Frequency Synthesizer for RF Personal Communications

PDF	21 Pages

Scroll/Zoom	100%

Fabricante Electrónico	NSC [National Semiconductor (TI)]

Página de inicio	http://www.national.com

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Charge Pump Current Specification Definitions

Note 6: IDo vs VDo = Charge Pump Output Current magnitude variation vs Voltage =

[1⁄2 * {|I1| − |I3|}]/[1⁄2 * {|I1| + |I3|}] * 100%

and

[1⁄2 * {|I4| − |I6|}]/[1⁄2 * {|I4| + |I6|}] * 100%

Note 7: IDo-sink vs IDo-source = Charge Pump Output Current Sink vs Source Mismatch =

[|I2| − |I5|]/[1⁄2 * {|I2| + |I5|}] * 100%

Note 8: IDo vs TA = Charge Pump Output Current magnitude variation vs Temperature =

[|I2 @ temp| − |I2 @ 25˚C|]/|I2 @ 25˚C| * 100%

and

[|I5 @ temp| − |I5 @ 25˚C|]/|I5 @ 25˚C| * 100%

DS012806-37

I1 = CP sink current at VDo = VP − ∆V

I2 = CP sink current at VDo = VP/2

I3 = CP sink current at VDo = ∆V

I4 = CP source current at VDo = VP − ∆V

I5 = CP source current at VDo = VP/2

I6 = CP source current at VDo = ∆V

∆V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VCC and ground. Typical values are between 0.5V and 1.0V.

LMX2332LSLB Datasheet(PDF) 7 Page - National Semiconductor (TI)

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