TLDR4100-AS12 datasheet(1/5 Pages) VISHAY

No. de pieza	TLDR4100-AS12

Descripción Electrónicos	Very high intensity even at low drive currents

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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TLDR4100

www.vishay.com

Vishay Semiconductors

Rev. 1.1, 23-Apr-13

1

Document Number: 82561

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Intensity LED, Ø 3 mm Untinted Clear Package

DESCRIPTION

This LED contains the double heterojunction (DH) GaAlAs on

GaAs technology.

This deep red LED can be utilized over a wide range of drive

current. It can be DC or pulse driven to achieve desired light

output.

The device is available in a 3 mm untinted clear package.

PRODUCT GROUP AND PACKAGE DATA

• Product group: LED

•Package: 3 mm

• Product series: standard

• Angle of half intensity: ± 22°

FEATURES

• Exceptional brightness

• Very high intensity even at low drive currents

• Wide viewing angle

• Low forward voltage

• 3 mm (T-1) untinted clear package

• Deep red color

• Categorized for luminous intensity

• Outstanding material efficiency

• Material

categorization:

For

definitions

of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Status lights

• Off/on indicator

• Background illumination

• Readout lights

• Maintenance lights

•Legend light



19220

PARTS TABLE

PART

COLOR

LUMINOUS INTENSITY

(mcd)

at IF

(mA)

WAVELENGTH

(nm)

at IF

(mA)

FORWARD VOLTAGE

(V)

at IF

(mA)

TECHNOLOGY

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

TLDR4100

Red

40

90

-

20

-

648

-

20

-

1.8

2.2

20

GaAlAs on GaAs

TLDR4100-AS12

Red

40

90

-

20

-

648

-

20

-

1.8

2.2

20

GaAlAs on GaAs

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

TLDR4100

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

6V

DC forward current

Tamb  60 °C

IF

50

mA

Surge forward current

tp  10 μs

IFSM

1A

Power dissipation

Tamb  60 °C

PV

100

mW

Junction temperature

Tj

+ 100

°C

Operating temperature range

Tamb

- 40 to + 100

°C

Storage temperature range

Tstg

- 55 to + 100

°C

Soldering temperature

t

 5 s, 2 mm from body

Tsd

260

°C

Thermal resistance junction/ambient

RthJA

400

K/W

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TLDR4100-AS12 Datasheet(PDF) 1 Page - Vishay Siliconix

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