55008 datasheet(1/9 Pages) STMICROELECTRONICS

No. de pieza	55008

Descripción Electrónicos	RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PDF	9 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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ADVANCED DATA

May, 29 2003

PD55008L

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V

• INTEGRATED ESD PROTECTION

• NEW LEADLESS PLASTIC PACKAGE

• SUPPLIED IN TAPE & REEL OF 3K UNITS

DESCRIPTION

The PD55008L is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 12 V in common source mode at frequencies up

to 1 GHz.

PD55008L boasts the excellent gain, linearity and

reliability of STH1LV latest LDMOS technology

mounted in the innovative leadless SMD plastic

package, PowerFLAT™. PD55008L’s

superior

linearity performance makes it an ideal solution for

car mobile radio.

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

-0.5 to 15

V

ID

Drain Current

5

A

PDISS

Power Dissipation (@ Tc = 70°C)

19.5

W

Tj

Max. Operating Junction Temperature

150

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

4.1

°C/W

ORDER CODE

PD55008L

BRANDING

55008

PowerFLAT

™(5x5)

PIN CONNECTION

TOP VIEW

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