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PSMN009 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PSMN009 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() Philips Semiconductors Product specification N-channel TrenchMOS ™ transistor PSMN009-100W REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current - - 100 A (body diode) I SM Pulsed source current (body - - 300 A diode) V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.82 1.2 V I F = 75 A; VGS = 0 V - 0.95 - V t rr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 100 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.5 - µC October 1999 3 Rev 1.100 |
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