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PSMN005 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PSMN005 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() October 1999 4 Rev 1.200 Philips Semiconductors Product specification PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current - - 75 A (body diode) I SM Pulsed source current (body - - 240 A diode) V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.85 1.2 V I F = 75 A; VGS = 0 V - 1.1 - V t rr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 80 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.2 - µC |
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