BTB41 datasheet(1/1 Pages) ISC

No. de pieza	BTB41

Descripción Electrónicos	isc Triacs

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website： www.iscsemi.com

isc & iscsemi is registered trademark

isc Triacs

BTB41

FEATURES

·

With TOP3 non insulated package

·

Suitables for general purpose where high surge current capability is required.

Application such as phase control and tatic switching on inductive or resistive load.

·

Minimum Lot-to-Lot variations for robust device performance and reliable operation

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MIN

UNIT

VDRM

Repetitive peak off-state voltage

800

V

VRRM

Repetitive peak reverse voltage

800

V

IT(RMS)

RMS on-state current (full sine wave)Tj=80℃

41

A

ITSM

Non-repetitive peak on-state current tp=20ms

410

A

Tj

Operating junction temperature

125

℃

Tstg

Storage temperature

-40~150

℃

PG(AV)

Average gate power dissipation(Tj=125℃)

1

W

Rth(j-c)

Thermal resistance, junction to case

0.9

℃

/W

Rth(j-a)

Thermal resistance, junction to ambient

50

℃

/W

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

IRRM

Repetitive peak reverse current

VR=VRRM,

VR=VRRM, Tj=125℃

0.005

5.0

mA

IDRM

Repetitive peak off-state current

VD=VDRM,

VD=VDRM, Tj=125℃

0.005

5.0

mA

IGT

Gate trigger current

Ⅰ

VD=12V; RL= 100Ω

50

mA

Ⅱ

50

Ⅲ

50

Ⅳ

100

IH

Holding current

IGT= 0.5A, Gate Open

80

mA

VGT

Gate trigger voltage all quadrant VD=12V; RL= 100Ω

1.3

V

VTM

On-state voltage

ITM= 60A; tp= 380μs

1.55

V

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