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LM4882 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM4882 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 12 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 6.0 V Storage Temperature −65˚C to +150˚C Input Voltage −0.3V to V DD + 0.3V Power Dissipation (Note 3) Internally limited ESD Susceptibility (Note 4) 2000V PIn 5 1500V Junction Temperature 150˚C Soldering Information Small Outline Package Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C See AN-450 ″Surface Mounting and their Effects on Product Reliability ″ for other methods of soldering surface mount devices. Thermal Resistance θ JC (MSOP) 56˚C/W θ JA (MSOP) 210˚C/W θ JC (SOP) 35˚C/W θ JA (SOP) 170˚C/W Operating Ratings Temperature Range T MIN ≤ TA ≤ TMAX −40˚C ≤ T A ≤ 85˚C Supply Voltage 2.4V ≤ V DD ≤ 5.5V Electrical Characteristics (Notes 1, 2) The following specifications apply for V DD = 5V unless otherwise specified. Limits apply for TA = 25˚C. Symbol Parameter Conditions LM4882 Units (Limits) Typical (Note 5) Limit (Note 6) I DD Quiescent Current V IN = 0V, IO = 0A 2 4.0 mA (max) I SD Shutdown Current V pin1 =VDD 0.5 5 µA (max) V OS Offset Voltage V IN = 0V 5 50 mV (max) P O Output Power THD+N=1% (max);f=1 kHz; R L =4Ω 380 mW R L =8Ω 270 250 mW (min) R L =32Ω 95 mW THD+N=10%;f=1kHz R L =4Ω 480 mW R L =8Ω 325 mW R L =32Ω 125 mW THD + N Total Harmonic Distortion + Noise R L =8Ω,P O = 250 mWrms; 0.5 % R L =32Ω,PO = 85 mWrms; 0.1 % f=1kHz PSRR Power Supply Rejection Ratio V pin3 = 2.5V, V ripple = 200 mVrms, f = 120 Hz 50 dB Electrical Characteristics (Notes 1, 2) The following specifications apply for V DD = 3V unless otherwise specified. Limits apply for TA = 25˚C. Symbol Parameter Conditions LM4882 Units (Limits) Typical (Note 5) Limit (Note 6) I DD Quiescent Current V IN = 0V, IO = 0A 1.2 mA I SD Shutdown Current V pin1 =VDD 0.3 µA V OS Offset Voltage V IN =0V 5 mV P O Output Power THD+N=1% (max);f=1kHz R L =8Ω 80 mW R L =32Ω 30 mW THD+N=10%;f=1kHz R L =8Ω 105 mW R L =32Ω 40 mW www.national.com 2 |
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