HMIC™ Silicon PIN Diode Switches

Rev. V11

MA4SWx10 Series

3

3

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

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3

Insertion Loss vs. Bias Current

Parameter

Absolute Maximum

RF CW Incident Power

+33 dBm

Reverse Voltage

-50 V

Bias Current per Port

±50 mA @ +25°C

Operating Temperature

-65°C to +125°C

Storage Temperature

-65°C to +150°C

Junction Temperature

+175°C

3. Exceeding any one or combination of these limits may cause

permanent damage to this device.

4. MACOM does not recommend sustained operation near these

survivability limits.

5. Maximum operating conditions for a combination of RF power,

DC bias and temperature: +33 dBm CW @ 15 mA (per diode)

+85°C.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

These

electronic

devices

are

sensitive

to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these Class 0

(HBM) and Class C1 (CDM).devices.

Typical Performance Curves @ 10 GHz:

Input Return Loss vs. Bias Current

Isolation vs. Bias Current

Output Return Loss vs. Bias Current

-0.7

-0.6

-0.5

-0.4

-0.3

0

10

20

30

40

50

MA4SW110

MA4SW210

MA4SW310

Current (mA)

-54

-52

-50

-48

-46

0

10

20

30

40

50

MA4SW110

MA4SW210

MA4SW310

Current (mA)

-35

-30

-25

-20

-15

0

10

20

30

40

50

MA4SW110

MA4SW210

MA4SW310

Current (mA)

-35

-30

-25

-20

-15

0

10

20

30

40

50

MA4SW110

MA4SW210

MA4SW310

Current (mA)