TPC8301 datasheet(1/7 Pages) TOSHIBA

No. de pieza	TPC8301

Descripción Electrónicos	Silicon P Channel MOS Type (L2-MOSVI)

PDF	7 Pages

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

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TPC8301

2002-05-17

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI)

TPC8301

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

Small footprint due to small and thin package

Low drain−source ON resistance : RDS (ON) = 95 mΩ (typ.)

High forward transfer admittance : |Yfs| = 4 S (typ.)

Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)

Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

VDSS

−30

V

Drain−gate voltage (RGS = 20 kΩ)

VDGR

−30

V

Gate−source voltage

VGSS

±20

V

D C

(Note 1)

ID

−3.5

Drain current

Pulse

(Note 1)

IDP

−14

A

Single-device

operation (Note 3a)

PD (1)

1.5

Drain power

dissipation

(t = 10 s)

(Note 2a)

Single-devece value

at dual operation

(Note 3b)

PD (2)

1.0

W

Single-device

operation (Note 3a)

PD (1)

0.75

Drain power

dissipation

(t = 10 s)

(Note 2b)

Single-devece value

at dual operation

(Note 3b)

PD (2)

0.45

W

Single pulse avalanche energy

(Note 4)

EAS

16

mJ

Avalanche current

IAR

−3.5

A

Repetitive avalanche energy

(Note 2a, Note 3b, Note 5)

EAR

0.10

mJ

Channel temperature

Tch

150

℃

Storage temperature range

Tstg

−55∼150

℃

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)

and (Note 5), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.080 g (typ.)

Circuit Configuration

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