2SD460 datasheet(1/2 Pages) ISC

No. de pieza	2SD460

Descripción Electrónicos	isc Silicon NPN Darlington Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

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isc Silicon NPN Darlington Power Transistor

2SD460

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·

High DC Current Gain

: hFE= 1500(Min) @IC= 5A

·

Low Saturation Voltage

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for general-purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7

A

ICP

Collector Current-Peak

12

A

IB

Base Current-Continuous

0.3

A

PC

Collector Power Dissipation

@ Ta=25℃

2

W

Collector Power Dissipation

@ TC=25℃

50

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

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2SD460 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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