ESJA54-08 datasheet(1/2 Pages) ISC

No. de pieza	ESJA54-08

Descripción Electrónicos	Silicon NPN Power Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistor

2SC2690

DESCRIPTION

·

High voltage and high fT

·

Complementary to 2SA1220 PNP transistor

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

The 2SC2690 is general purpose transistors designed

For use in audio and radio frequency power amplifiers.

·

Suitable for use in driver stage of 50 to 100W audio

Amplifiers and output stage of TV vertical deflection

circuit

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCER

Collector-Emitter Voltage

RBE=150Ω

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1.2

A

PC

Collector Power Dissipation

@ Tc=25℃

20

W

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

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ESJA54-08 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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