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MBR3100G-SMA-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza MBR3100G-SMA-R
Descripción Electrónicos  High Surge Capability
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
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MBR3100G-SMA-R Datasheet(HTML) 2 Page - Unisonic Technologies

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MBR3100
Preliminary
DIODE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R202-059 .a
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
VRM
100
V
Working Peak Reverse Voltage
VRWM
100
V
Peak Repetitive Reverse Voltage
VRRM
100
V
Average Rectified Output Current
IO
3.0
A
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
IFSM
80
A
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS (PER LEG)
PARAMETER
SYMBOL
RATINGS
UNIT
Typical Thermal Resistance
θJL
20
°C/W
ELECTRICAL CHARACTERISTICS (PER LEG) (TA =25°C unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Reverse Breakdown Voltage
V(BR)R
IR=0.50mA
100
V
IF=3.0A, TC=25°C
0.85
V
Instantaneous Forward Voltage
VFM
IF=3.0A, TC=125°C
0.70
V
VR=100V, TC=25°C
500
μA
Leakage Current
IRM
VR=100V, TC=125°C
2.0
mA
Note: Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.



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