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2SD1647 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD1647
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1647 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD1647
DESCRIPTION
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
·
High DC Current Gain
: hFE= 1000(Min) @IC= 1.0A
·
Low Saturation Voltage
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general purpose amplifier and low frequency
power Amp applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-70
V
VCEO
Collector-Emitter Voltage
50-70
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Peak
3
A
PC
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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