2SD1572 datasheet(1/2 Pages) ISC

No. de pieza	2SD1572

Descripción Electrónicos	isc Silicon NPN Darlington Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

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isc Silicon NPN Darlington Power Transistor

2SD1572

DESCRIPTION

·

High DC Current Gain-

: hFE = 1000(Min)@ IC= 4A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 60V(Min)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat) = 1.5V(Max)@ IC= 4A

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

12

A

PC

Collector Power Dissipation

@TC=25℃

40

W

Collector Power Dissipation

@Ta=25℃

2

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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2SD1572 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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