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LM389 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM389 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page  Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage 15V Package Dissipation (Note 1) 189W Input Voltage g 04V Storage Temperature b 65 Cto a150 C Operating Temperature 0 Cto a70 C Junction Temperature 150 C Lead Temperature (Soldering 10 sec) 260 C Collector to Emitter Voltage VCEO 12V Collector to Base Voltage VCBO 15V Collector to Substrate Voltage VCIO (Note 2) 15V Collector Current IC 25 mA Emitter Current IE 25 mA Base Current IB 5mA Power Dissipation (Each Transistor) TA s a70 C 150 mW Thermal Resistance iJC 24 CW iJA 70 CW Electrical Characteristics TA e 25 C Symbol Parameter Conditions Min Typ Max Units AMPLIFIER VS Operating Supply Voltage 4 12 V IQ Quiescent Current VS e 6V VIN e 0V 6 12 mA POUT Output Power (Note 3) THD e 10% VS e 6V RL e 8X 250 325 mW VS e 9V RL e 16X 500 mW AV Voltage Gain VS e 6V f e 1 kHz 23 26 30 dB 10 mF from Pins 4 to 12 46 dB BW Bandwidth VS e 6V Pins 4 and 12 Open 250 kHz THD Total Harmonic Distortion VS e 6V RL e 8X POUT e 125 mW 02 30 % f e 1 kHz Pins 4 and 12 Open PSRR Power Supply Rejection Ratio VS e 6V f e 1 kHz CBYPASS e 10 mF 30 50 dB Pins 4 and 12 Open Referred to Output RIN Input Resistance 10 50 kX IBIAS Input Bias Current VS e 6V Pins 5 and 16 Open 250 nA TRANSISTORS VCEO Collector to Emitter IC e 1 mA IB e 0 12 20 V Breakdown Voltage VCBO Collector to Base IC e 10 mA IE e 0 15 40 V Breakdown Voltage VCIO Collector to Substrate IC e 10 mA IE e IB e 0 15 40 V Breakdown Voltage VEBO Emitter to Base IE e 10 mA IC e 0 64 71 78 V Breakdown Voltage HFE Static Forward Current IC e 10 mA 100 Transfer Ratio (Static Beta) IC e 1 mA 100 275 IC e 10 mA 275 hoe Open-Circuit Output Admittance IC e 1 mA VCE e 5V f e 10 kHz 20 m mho VBE Base to Emitter Voltage IE e 1 mA 07 085 V lVBE1–VBE2l Base to Emitter Voltage Offset IE e 1mA 1 5 mV VCESAT Collector to Emitter IC e 10 mA IB e 1mA 015 05 V Saturation Voltage CEB Emitter to Base Capacitance VEB e 3V 15 pF CCB Collector to Base Capacitance VCB e 3V 2 pF CCI Collector to Substrate VCI e 3V 35 pF Capacitance hfe High Frequency Current Gain IC e 10 mA VCE e 5V f e 100 MHz 15 55 Note 1 For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance of 66 CW junction to ambient Note 2 The collector of each transistor is isolated from the substrate by an integral diode Therefore the collector voltage should remain positive with respect to pin 17 at all times Note 3 If oscillation exists under some load conditions add 27X and 005 mF series network from pin 1 to ground 2 |
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