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2SD256 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD256 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD256 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 2.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 4V 1.8 V ICBO Collector Cutoff Current VCB= 60V; VEB= 0 10 uA ICEO Collector Cutoff Current VCE= 40V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 uA hFE DC Current Gain IC= 1A ; VCE= 4V 40 fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V 4 MHz Switching times tr Rise Time IC= 2A ;IB1=0.4A; IB2= -0.1A RL= 3Ω; VCC= 6V 1.2 μ s tstg Storage Time 1.6 μ s tf Fall Time 1.7 μ s |
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