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2SD213 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD213
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD213 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SD213
DESCRIPTION
·
Excellent Safe Operating Area
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min.)
·
Low Collector Saturation Voltage-
·
High Switching Speed
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak
20
A
PC
Collector Power Dissipation
@TC=25℃
100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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