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STM32F303XD Datasheet(PDF) 149 Page - STMicroelectronics

No. de pieza STM32F303XD
Descripción Electrónicos  ARM Cortex-M4 32b MCUFPU, up to 512KB Flash, 80KB SRAM, FSMC, 4 ADCs, 2 DAC ch., 7 comp, 4 Op-Amp, 2.0-3.6 V
PDF  173 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F303XD Datasheet(HTML) 149 Page - STMicroelectronics

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DocID026415 Rev 5
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STM32F303xD STM32F303xE
Electrical characteristics
151
PGA gain
Non inverting gain value
-
-2
-
-
-4
-
-
-8
-
-
-16
-
-
Rnetwork
R2/R1 internal resistance values in
PGA mode (3)
Gain=2
-
5.4/5.4
-
k
Ω
Gain=4
-
16.2/5.4
-
Gain=8
-
37.8/5.4
-
Gain=16
-
40.5/2.7
-
PGA gain error
PGA gain error
-
-1%
-
1%
-
Ibias
OPAMP input bias current
-
-
-
±0.2(4)
µA
PGA BW
PGA bandwidth for different non
inverting gain
PGA Gain = 2,
Cload = 50pF,
Rload = 4 K
Ω
-4
-
MHz
PGA Gain = 4,
Cload = 50pF,
Rload = 4 K
Ω
-2
-
PGA Gain = 8,
Cload = 50pF,
Rload = 4 K
Ω
-1
-
PGA Gain = 16,
Cload = 50pF,
Rload = 4 K
Ω
-0.5
-
en
Voltage noise density
@ 1KHz, Output
loaded with
4 K
Ω
-
109
-
@ 10KHz,
Output loaded
with 4 K
Ω
-43
-
1. Guaranteed by design, not tested in production.
2. The saturation voltage can be also limited by the Iload (drive current).
3. R2 is the internal resistance between OPAMP output and OPAMP inverting input.
R1 is the internal resistance between OPAMP inverting input and ground.
The PGA gain =1+R2/R1
4. Mostly TTa I/O leakage, when used in analog mode.
Table 88. Operational amplifier characteristics(1) (continued)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
nV
Hz
-----------



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