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2SD1095 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD1095
Descripción Electrónicos  Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1095 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD1095 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD1095 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SD1095
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IB= 0
1200
V(BR)CEO
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
800
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
2.0
V
ICBO
Collector Cutoff Current
VCB= 1200V; IE= 0
VCB= 1200V; IE= 0; TC=125℃
0.1
1
mA
ICEO
Collector Cutoff Current
VCE= 800V; IB= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
0.1
mA
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 5V
10
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
8
Pulsed: Pulse duration = 300 ms, duty cycle = 2.0 %
Switching times; Resistive Load
tr
Rise Time
IC= 1A ;IB1=-IB2= 0.3A; VCC= 400V;
0.5
μ
s
ts
Storage Time
3.5
μ
s
tf
Fall Time
0.8
μ
s



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