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STM32L081CB Datasheet(PDF) 68 Page - STMicroelectronics

No. de pieza STM32L081CB
Descripción Electrónicos  Access line ultra-low-power 32-bit MCU ARM-based Cortex-M0, up to 192KB Flash, 20KB SRAM, 6KB EEPROM, ADC, AES
PDF  110 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L081CB Datasheet(HTML) 68 Page - STMicroelectronics

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Electrical characteristics
STM32L081xx
68/110
DocID027513 Rev 4
6.3.7
Internal clock source characteristics
The parameters given in Table 41 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 20.
High-speed internal 16 MHz (HSI16) RC oscillator
Figure 20. HSI16 minimum and maximum value versus temperature
Table 41. 16 MHz HSI16 oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
Frequency
VDD = 3.0 V
-
16
-
MHz
TRIM
(1)(2)
1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are
multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).
HSI16 user-
trimmed resolution
Trimming code is not a multiple of 16
-
0.4
0.7
%
Trimming code is a multiple of 16
-
-
1.5
%
ACCHSI16
(2)
2. Guaranteed by characterization results.
Accuracy of the
factory-calibrated
HSI16 oscillator
VDDA = 3.0 V, TA = 25 °C
-1(3)
3. Guaranteed by test in production.
-1(3)
%
VDDA = 3.0 V, TA = 0 to 55 °C
-1.5
-
1.5
%
VDDA = 3.0 V, TA = -10 to 70 °C
-2
-
2
%
VDDA = 3.0 V, TA = -10 to 85 °C
-2.5
-
2
%
VDDA = 3.0 V, TA = -10 to 105 °C
-4
-
2
%
VDDA = 1.65 V to 3.6 V
TA = − 40 to 125 °C
-5.45
-
3.25
%
tSU(HSI16)(2)
HSI16 oscillator
startup time
-
-
3.7
6
µs
IDD(HSI16)(2)
HSI16 oscillator
power consumption
-
-
100
140
µA



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