LE25S161

www.onsemi.com

47

16-6. DC Characteristics

Parameter

Symbol

Conditions

VDD=1.65 to 1.95V

unit

Ratings

min

typ

max

Read mode

operating current

ICCR

SCK=

0.1VDD/0.9VDD,

HOLD=WP=

0.9VDD,

SO=open

Low-Power Read

(RDLP: 03h)

33.33MHz

3.5

4.5

mA

High-Speed Read

(RDHS: 0Bh)

33.33MHz

4.0

5.5

mA

70MHz

6.0

7.0

mA

Dual Output Read

(RDDO: 3Bh)

or

Dual I/O Read

(RDIO: BBh)

33.33MHz

5.0

7.0

mA

50MHz

6.0

8.0

mA

Small Sector Erase operating current

ICCSSE

tSSE=max,

Average current

3.5

4.5

mA

Sector Erase operating current

ICCSE

tSE=max

Average current

3.5

4.5

mA

Chip Erase operating current

ICCCHE

tCHE=max

Average current

4.0

5.0

mA

Normal

Program mode

operating current

ICCPP

tPP=max

Average current

6.5

7.5

mA

Low-Power

Program mode

operating current

ICCPPL

tPPL=max

Average current

5.0

6.5

mA

CMOS

standby current

ISB

CS=VDD, HOLD=WP=VDD,

SI=VSS/VDD, SO=open,

9

50

µA

Deep Power-down standby current

IDSB

CS=VDD, HOLD=WP=VDD,

SI=VSS/VDD, SO=open,

3.0

12

µA

Input leakage current

ILI

2.0

µA

Output leakage current

ILO

2.0

µA

Input low voltage

VIL

−0.3

0.3VDD

V

Input high voltage

VIH

0.7VDD

VDD+0.3

V

Output low voltage

VOL

IOL=100µA, VDD=VDD min

0.2

V

IOL=1.6mA, VDD=VDD min

0.4

Output high voltage

VOH

IOH=−100µA, VDD=VDD min

VDD-0.2

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.