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LM2427 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LM2427
Descripción Electrónicos  Triple 80 MHz CRT Driver
PDF  6 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2427 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage Vaa85V
Safe Operating Power Consumption
14W
Storage Temperature Range TSTG
b
25 Cto a100 C
Operating Temperature Range TCASE
b
20 Cto a90 C
Lead Temperature (Soldering 10 sec)
300 C
ESD Tolerance
TBD
Electrical Characteristics Vae 80V RG e 430X C1 e 47 pF CL e 8 pF 50 VPP output swing with 40V DC
offset See
Figure 1 TCASE e 25 C unless otherwise noted
Symbol
Parameter
Conditions
LM2427
Units
Min
Typical
Max
ICC
Supply Current (per Amplifier)
No Input or Output Load
24
30
mA
VINDC
Input Offset Voltage
14
16
18
V
VOUTDC
Output Offset Voltage
34
40
46
V
tR
Rise Time
10% to 90% (Note 1)
35
ns
tF
Fall Time
90% to 10% (Note 1)
35
ns
AV
Voltage Gain
b
11
b
13
b
14
VV
LE
Linearity Error
VOUT from a10V to a70V (Note 2)
5
%
D
AV
Gain Matching
(Note 3)
02
dB
Note 1
Input signal tr tf k 15 ns fin e 1 MHz
Note 2
Linearity error is defined as The variation in small signal gain from a20V to a70V output with a 100 mVAC 1 MHz input signal
Note 3
Calculated value from voltage gain test on each channel
Typical Performance Characteristics
Typical Test Circuit (One Section)
TLH11967 – 3
Note
CL total load capacltance includes all parasitic capacitances
FIGURE 1 Test Circuit (One Section)
This test circuit is used for both characteristic plots
Typical Rise Time vs Capacitive Loading
TLH11967 – 10
Typical Fall Time vs Capacitive Loading
TLH11967 – 5
2



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