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2SA1649 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SA1649
Descripción Electrónicos  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1649 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA1649 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA1649 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
2SA1649
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCE(sat)-1NOTE
Collector-Emitter Saturation Voltage IC= -3A; IB= -200mA
-0.3
V
VCE(sat)-2NOTE
Collector-Emitter Saturation Voltage IC= -4A; IB= -300mA
-0.5
V
VBE(sat)-1NOTE
Base-Emitter Saturation Voltage
IC= -3A; IB= -200mA
-1.2
V
VBE(sat)-2NOTE
Base-Emitter Saturation Voltage
IC= -4A; IB= -300mA
-1.5
V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
-10
μ
A
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-10
μ
A
hFE-1NOTE
DC Current Gain
IC= -0.5A; VCE= -2V
100
hFE-2NOTE
DC Current Gain
IC= -2A; VCE= -2V
100
400
hFE-3NOTE
DC Current Gain
IC= -4A; VCE= -2V
60
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
250
pF
fT
Current-Gain—Bandwidth Product
IC= -500mA; VCE= -10V
120
MHz
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
hFE-2 Classifications
M
L
K
100-200
150-300 200-400



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